Hawkes International Semiconductor
Probing Nano Electronic Devices
Probing Nano Electronic Devices
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Hawkes International Semiconductor offers advanced DC, AC and pulsed
characterization of electronic devices and test structures, semiconductor and
dielectric materials for fab FEOL process development, device engineering
and failure analysis. These devices or structures include
Our low-leakage I-V and C-V probing capabilities are
characterization of electronic devices and test structures, semiconductor and
dielectric materials for fab FEOL process development, device engineering
and failure analysis. These devices or structures include
- MOSFET, HKMGFET, FinFET Transistors
- NAND and NOR flash memory cells
- Bipolar transistors
- PN or PIN junctions, diodes
- Gate-controlled diodes
- MOS Capacitors
- Metal via/line and silicide contact structures
Our low-leakage I-V and C-V probing capabilities are
- Minimum voltage source and measure resolution: 100 nV
- Minimum current source and measure resolution: 10 fA
- C-V frequency: 20 Hz ~ 2 MHz. DC bias: 0~40 V
- Chuck temperature range: 25 to 250 degree C
- Whole (up to 8") or partial wafer probing
| Example: The drain current versus gate voltage curve of a commercial MOSFET Measured by Hawkes International Semiconductor. |